The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8198667 B1

Date of Patent:

Jun. 12, 2012

Filed:

Dec. 25, 2008

Semiconductor memory device and method for manufacturing same

Applicants:

Takuji Kuniya, Tokyo, JP;

Yosuke Komori, Tokyo, JP;

Ryota Katsumata, Tokyo, JP;

Yoshiaki Fukuzumi, Tokyo, JP;

Masaru Kito, Tokyo, JP;

Masaru Kidoh, Tokyo, JP;

Hiroyasu Tanaka, Tokyo, JP;

Megumi Ishiduki, Tokyo, JP;

Hideaki Aochi, Kanagawa-ken, JP;

Inventors:

Takuji Kuniya, Tokyo, JP;

Yosuke Komori, Tokyo, JP;

Ryota Katsumata, Tokyo, JP;

Yoshiaki Fukuzumi, Tokyo, JP;

Masaru Kito, Tokyo, JP;

Masaru Kidoh, Tokyo, JP;

Hiroyasu Tanaka, Tokyo, JP;

Megumi Ishiduki, Tokyo, JP;

Hideaki Aochi, Kanagawa-ken, JP;

Assignee:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Attorney:

Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

David S Blum

Int. Cl.

CPC ...

H01L 27/115 (2006.01); H01L 21/8247 (2006.01); H01L 29/792 (2006.01); H01L 29/788 (2006.01);

U.S. Cl.

CPC ...

Abstract

A laminated body is formed by alternately laminating a plurality of dielectric films and electrode films on a silicon substrate. Next, a through hole extending in the lamination direction is formed in the laminated body. Next, a selective nitridation process is performed to selectively form a charge layer made of silicon nitride in a region of an inner surface of the through hole corresponding to the electrode film. Next, a high-pressure oxidation process is performed to form a block layer made of silicon oxide between the charge layer and the electrode film. Next, a tunnel layer made of silicon oxide is formed on an inner side surface of the through hole. Thus, a flash memory can be manufactured in which the charge layer is split for each electrode film.

Find Patent Forward Citations

Kuniya, Takuji. (2012). Semiconductor memory device and method for manufacturing same (U.S. Patent No. 8198667). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8198667

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