The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2012
Filed:
Dec. 31, 2009
Venkatesh Mohanakrishnaswamy, Chennai, IN;
Olivier Le Neel, Singapore, SG;
Loi N. Nguyen, Carrollton, TX (US);
Venkatesh Mohanakrishnaswamy, Chennai, IN;
Olivier Le Neel, Singapore, SG;
Loi N. Nguyen, Carrollton, TX (US);
STMicroelectronics, Inc., Carrollton, TX (US);
STMicroelectronics Asia Pacific Pte Ltd., Singapore, SG;
Abstract
A method that includes forming a first layer having a first dopant concentration, the first layer having an integrated circuit region and a micro-electromechanical region and doping the micro-electromechanical region of the first layer to have a second dopant concentration is presented. The method includes forming a second layer having a third dopant concentration overlying the first layer, doping the second layer that overlies the micro-electromechanical region to have a fourth dopant concentration, forming a micro-electromechanical structure in the micro-electromechanical region using the first and second layers, and forming active components in the integrated circuit region using the second layer.