The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2012
Filed:
May. 02, 2008
Tadahiro Ohmi, Sendai, JP;
Hirokazu Asahara, Kyoto, JP;
Atsutoshi Inokuchi, Nirasaki, JP;
Kohei Watanuki, Tokyo, JP;
Tadahiro Ohmi, Sendai, JP;
Hirokazu Asahara, Kyoto, JP;
Atsutoshi Inokuchi, Nirasaki, JP;
Kohei Watanuki, Tokyo, JP;
National University Corporation Tohoku University, Miyagi, JP;
Rohm Co., Ltd., Kyoto, JP;
Tokyo Electron Limited, Tokyo, JP;
Ube Industries, Ltd., Yamaguchi, JP;
Abstract
An organometal material gas is supplied into a low electron temperature and high density plasma excited by microwaves to form a thin film of a compound on a substrate as a film forming object. In this case, the temperature of a supply system for the organometal material gas is controlled by taking advantage of the relationship between the vapor pressure and temperature of the organometal material gas.