The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2012
Filed:
Oct. 02, 2008
Jianliang LI, Hillsboro, OR (US);
Lawrence S. Melvin, Iii, Hillsboro, OR (US);
Qiliang Yan, Portland, OR (US);
Jianliang Li, Hillsboro, OR (US);
Lawrence S. Melvin, III, Hillsboro, OR (US);
Qiliang Yan, Portland, OR (US);
Synopsys, Inc., Mountain View, CA (US);
Abstract
One embodiment of the present invention provides techniques and systems for determining modeling parameters for a photolithography process. During operation, the system can receive a layout. Next, the system can determine an iso-focal pattern in the layout. The system can then determine multiple aerial-image-intensity values in proximity to the iso-focal pattern by convolving the layout with multiple optical models, wherein the multiple optical models model the photolithography process's optical system under different focus conditions. Next, the system can determine a location in proximity to the iso-focal pattern where the aerial-image-intensity values are substantially insensitive to focus variations. The system can then use the location and the associated aerial-image-intensity values to determine an optical threshold and a resist bias. The optical threshold and the resist bias can then be used for modeling the photolithography process.