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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8184411 B1

PDFFull Text
Date of Patent:
May. 22, 2012

Filed:

Oct. 26, 2009

Mtj incorporating cofe/ni multilayer film with perpendicular magnetic anisotropy for mram application

Applicants:

Kunliang Zhang, Fremont, CA (US);

Min LI, Dublin, CA (US);

Pokang Wang, Los Altos, CA (US);

Yuchen Zhou, San Jose, CA (US);

Cheng T. Horng, San Jose, CA (US);

Ru-ying Tong, Los Gatos, CA (US);

Inventors:

Kunliang Zhang, Fremont, CA (US);

Min Li, Dublin, CA (US);

Pokang Wang, Los Altos, CA (US);

Yuchen Zhou, San Jose, CA (US);

Cheng T. Horng, San Jose, CA (US);

Ru-Ying Tong, Los Gatos, CA (US);

Assignees:

Headway Technologies, Inc., Milpitas, CA (US);

MagIC Technologies, Inc., Milpitas, CA (US);

Attorneys:

Saile Ackerman LLC

Stephen B. Ackerman

Primary Examiner:

Allen Cao

Int. Cl.
CPC ...
G11B 5/33 (2006.01);
U.S. Cl.
CPC ...
Abstract

A MTJ for a spintronic device is disclosed and includes a thin composite seed layer made of at least Ta and a metal layer having fcc(111) or hcp(001) texture as in Ta/Ti/Cu to enhance perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (CoFe/Ni), (Co/NiFe), (Co/NiCo), (CoFe/NiFe), or (CoFe/NiCo)composition where x is from 5 to 30. In one embodiment, a CPP-TMR spin valve has one or both of a laminated free layer and laminated reference layer with the aforementioned compositions. The MTJ includes an interfacial layer made of CoFeB, CoFeB/CoFe, or CoFe/CoFeB between each laminated structure and the tunnel barrier. The laminated layers are deposited by a low power and high Ar pressure process to avoid damaging interfaces between adjoining layers. Annealing occurs at 220° C. to 400° C. A laminated layer with high PMA may also be included in one or more layers of a spin transfer oscillator.

Find Patent Forward Citations

Zhang, Kunliang. (2012). Mtj incorporating cofe/ni multilayer film with perpendicular magnetic anisotropy for mram application (U.S. Patent No. 8184411). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8184411

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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