The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2012
Filed:
Sep. 12, 2006
Applicants:
Luis Isidro Fernandez, Somerville, MA (US);
Masafumi Urakawa, Salem, MA (US);
Inventors:
Luis Isidro Fernandez, Somerville, MA (US);
Masafumi Urakawa, Salem, MA (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method and system for etching a hafnium containing material using a boron tri-chloride (BCl) based process chemistry is described. A substrate having a hafnium containing layer, such as a layer of hafnium dioxide (HfO) is subjected a dry etching process comprising BCland an additive gas including: an oxygen-containing gas, such as O; or a nitrogen-containing gas, such as N; or a hydrocarbon gas (CH), such as CH; or a combination of two or more thereof.