The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2012
Filed:
Aug. 31, 2009
Reiner Barthelmess, Soest, DE;
Anton Mauder, Kolbermoor, DE;
Franz Josef Niedernostheide, Muenster, DE;
Hans-joachim Schulze, Ottobrunn, DE;
Reiner Barthelmess, Soest, DE;
Anton Mauder, Kolbermoor, DE;
Franz Josef Niedernostheide, Muenster, DE;
Hans-Joachim Schulze, Ottobrunn, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A method for producing a buried stop zone in a semiconductor body and a semiconductor component having a stop zone, the method including providing a semiconductor body having a first and a second side and a basic doping of a first conduction type. The method further includes irradiating the semiconductor body via one of the sides with protons, as a result of which protons are introduced into a first region of the semiconductor body situated at a distance from the irradiation side. The method also includes carrying out a thermal process in which the semiconductor body is heated to a predetermined temperature for a predetermined time duration, the temperature and the duration being chosen such that hydrogen-induced donors are generated both in the first region and in a second region adjacent to the first region in the direction of the irradiation side.