The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2012
Filed:
Nov. 13, 2009
Chuan-yi Lin, Hsin-Chu, TW;
Ching-chen Hao, Zhubei, TW;
Chen Cheng Chou, Shanhua Township, TW;
Sheng-yuan Lin, Hsin-Chu, TW;
Chuan-Yi Lin, Hsin-Chu, TW;
Ching-Chen Hao, Zhubei, TW;
Chen Cheng Chou, Shanhua Township, TW;
Sheng-Yuan Lin, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The formation of a seal ring in a semiconductor integrated circuit (IC) die is described. Through-silicon vias (TSVs) are typically formed in a semiconductor IC die to facilitate the formation of a three dimensional (3D) stacking die structure. The TSVs may be utilized to provide electrical connections between components in different dies of the 3D stacking die structure. A seal ring is formed in the inter-metal dielectric (IMD) layers of an IC die, enclosing an active circuit region. The real ring is formed prior to the formation of the TSVs, preventing moistures or other undesired chemical agents from diffusing into the active circuit region during the subsequent processes of forming TSVs.