The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 10, 2012

Filed:

Oct. 13, 2008
Applicants:

Soon Yoong Loh, Masai, MY;

Carol Goh, Singapore, SG;

Kin Wai Tang, Singapore, SG;

Kim Foong Kong, Singapore, SG;

Inventors:

Soon Yoong Loh, Masai, MY;

Carol Goh, Singapore, SG;

Kin Wai Tang, Singapore, SG;

Kim Foong Kong, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for fabricating a semiconductor device is provided. The method comprising forming a first layer over a substrate and a second layer over the first layer. A patterned masking layer is subsequently provided over the second layer and a patterned second layer with outwardly tapered sidewalls is formed by isotropically etching exposed portions of the second layer. A patterned first layer is the formed by etching the first layer in accordance with the patterned second layer.


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