The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2012
Filed:
Dec. 03, 2009
Zong-long Jhang, Hsinchu, TW;
Chia-ming Chang, Hsinchu, TW;
Hsiang-chih Hsiao, Hsinchu, TW;
Chun-yi Chiang, Hsinchu, TW;
Che-yung Lai, Hsinchu, TW;
Chou-huan Yu, Hsinchu, TW;
Ta-wen Liao, Hsinchu, TW;
Zong-Long Jhang, Hsinchu, TW;
Chia-Ming Chang, Hsinchu, TW;
Hsiang-Chih Hsiao, Hsinchu, TW;
Chun-Yi Chiang, Hsinchu, TW;
Che-Yung Lai, Hsinchu, TW;
Chou-Huan Yu, Hsinchu, TW;
Ta-Wen Liao, Hsinchu, TW;
AU Optronics Corp., Hsinchu, TW;
Abstract
A photomask for fabricating a thin film transistor (TFT) is disclosed. The photomask includes a translucent layer disposed on a transparent substrate and covering U-shaped and rectangular channel-forming regions of the transparent substrate. First and second light-shielding layers are disposed on the translucent layer and located at the outer and inner sides of the U-shaped channel-forming region, respectively, and third and fourth light-shielding layers are disposed on the translucent layer and located at opposite sides of the rectangular channel-forming region, respectively, to serve as source/drain-forming regions. An end of the third light-shielding layer extends to the first light-shielding layer. A plurality of first light-shielding islands is disposed on the translucent layer and located within the rectangular channel-forming region. A method for fabricating source/drain electrodes of a TFT is also disclosed.