The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2012
Filed:
Jun. 15, 2007
Kei Murayama, Nagano, JP;
Mitsutoshi Higashi, Nagano, JP;
Naoyuki Koizumi, Nagano, JP;
Yuichi Taguchi, Nagano, JP;
Akinori Shiraishi, Nagano, JP;
Masahiro Sunohara, Nagano, JP;
Kei Murayama, Nagano, JP;
Mitsutoshi Higashi, Nagano, JP;
Naoyuki Koizumi, Nagano, JP;
Yuichi Taguchi, Nagano, JP;
Akinori Shiraishi, Nagano, JP;
Masahiro Sunohara, Nagano, JP;
Shinko Electric Industries Co., Ltd., Nagano-shi, Nagano, JP;
Abstract
In a semiconductor device, a light emitting elementhas been mounted on an upper plane of a semiconductor substrate. In an impurity diffusion region of the semiconductor substrate, a P conducting type of a layer, and an N layerhave been formed, while an N conducting type impurity is implanted to the P layer, and then the implanted impurity is diffused to constitute the N layer. A zener diodemade of a semiconductor device has been formed by the P layerand the N layer