The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2012
Filed:
Jul. 10, 2009
Applicants:
Chen-hua Yu, Hsin-Chu, TW;
Yung-cheng LU, Taipei, TW;
Hui-lin Chang, Hsin-Chu, TW;
Ting-yu Shen, JiJi Town, TW;
Hung Chun Tsai, Hsin-Chu, TW;
Inventors:
Chen-Hua Yu, Hsin-Chu, TW;
Yung-Cheng Lu, Taipei, TW;
Hui-Lin Chang, Hsin-Chu, TW;
Ting-Yu Shen, JiJi Town, TW;
Hung Chun Tsai, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 27/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
An interconnect structure of an integrated circuit and a method for forming the same are provided. The interconnect structure includes a semiconductor substrate, a low-k dielectric layer over the semiconductor substrate, a conductor in the low-k dielectric layer, and a cap layer on the conductor. The cap layer has at least a top portion comprising a metal silicide/germanide.