The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2012
Filed:
Jun. 12, 2008
Michael P. Chudzik, Danbury, CT (US);
Troy Graves-abe, Wappingers Falls, NY (US);
Rashmi Jha, Toledo, OH (US);
Renee T. MO, Briarcliff Manor, NY (US);
Keith Kwong Hon Wong, Wappingers Falls, NY (US);
Michael P. Chudzik, Danbury, CT (US);
Troy Graves-Abe, Wappingers Falls, NY (US);
Rashmi Jha, Toledo, OH (US);
Renee T. Mo, Briarcliff Manor, NY (US);
Keith Kwong Hon Wong, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Structure and method of improving the performance of metal gate devices by depositing an in-situ silicon (Si) cap are disclosed. A wafer including a substrate and a dielectric layer is heated through a degas process, and then cooled to approximately room temperature. A metal layer is then deposited, and then an in-situ Si cap is deposited thereon. The Si cap is deposited without vacuum break, i.e., in the same mainframe or in the same chamber, as the heating, cooling and metal deposition processes. As such, the amount of oxygen available for interlayer oxide regrowth during subsequent processing is reduced as well as the amount oxygen trapped in the metal gate.