The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 20, 2012

Filed:

May. 11, 2004
Applicants:

Jean Louise Vincent, Bethlehem, PA (US);

Mark Leonard O'neill, Allentown, PA (US);

Raymond Nicholas Vrtis, Orefield, PA (US);

Aaron Scott Lukas, Lansdale, PA (US);

Brian Keith Peterson, Fogelsville, PA (US);

Mark Daniel Bitner, Nazareth, PA (US);

Inventors:

Jean Louise Vincent, Bethlehem, PA (US);

Mark Leonard O'Neill, Allentown, PA (US);

Raymond Nicholas Vrtis, Orefield, PA (US);

Aaron Scott Lukas, Lansdale, PA (US);

Brian Keith Peterson, Fogelsville, PA (US);

Mark Daniel Bitner, Nazareth, PA (US);

Assignee:

Air Products and Chemicals, Inc., Allentown, PA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 10/06 (2006.01); C23C 16/24 (2006.01);
U.S. Cl.
CPC ...
Abstract

A chemical vapor deposition process for preparing a low dielectric constant organosilicate (OSG) having enhanced mechanical properties by adjusting the amount of organic groups, such as methyl groups, within the mixture is disclosed herein. In one embodiment of the present invention, the OSG film is deposited from a mixture comprising a first silicon-containing precursor that comprises from 3 to 4 Si—O bonds per Si atom, from 0 to 1 of bonds selected from the group consisting of Si—H, Si—Br, and Si—Cl bonds per Si atom and no Si—C bonds and a second silicon-containing precursor that comprises at least one Si—C bond per Si atom. In another embodiment of the present invention, the OSG film is deposited from a mixture comprising an asymmetric silicon-containing precursor. In either embodiment, the mixture may further contain a porogen precursor to provide a porous OSG film.


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