The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2012
Filed:
Jun. 15, 2007
Yasuhiko Kojima, Nirasaki, JP;
Taro Ikeda, Nirasaki, JP;
Tatsuo Hatano, Nirasaki, JP;
Tokyo Electrcn Limited, Tokyo, JP;
Abstract
A semiconductor device, which suppresses formation of an organic impurity layer and has excellent adhesiveness to a copper film and a metal to be a base, is manufactured. A substrate (wafer W) coated with a barrier metal layer (base film)formed of a metal having a high oxidation tendency, such as titanium, is placed in a processing chamber. At the time of starting to supply water vapor or after that, a material gas containing an organic compound of copper (for instance, Cu(hfac)TMVS) is supplied, and a copper film is formed on the surface of the barrier metal layerwhereupon the oxide layeris formed by the water vapor. Then, heat treatment is performed on the wafer W, and the oxide layeris converted into an alloy layerof a metal and copper which constitute the barrier metal layer