The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2012
Filed:
Oct. 30, 2007
Applicants:
Kuei-shun Chen, Hsinchu, TW;
Chin-hsiang Lin, Hsinchu, TW;
T. H. Lin, San-Chung, TW;
Chia-hsiang Lin, Hsinchu, JP;
Inventors:
Kuei-Shun Chen, Hsinchu, TW;
Chin-Hsiang Lin, Hsinchu, TW;
T. H. Lin, San-Chung, TW;
Chia-Hsiang Lin, Hsinchu, JP;
Assignee:
Taiwan Semicondutor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B30B 9/28 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method an apparatus for fabricating an interconnection structure. A substrate is provided with a dielectric layer thereon. The dielectric layer comprises at least one opening therein. A gap-filling material is applied on the substrate filling the at least one opening. The gap-filling material is planarized using a template to create a substantially planarized surface.