The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2012
Filed:
Dec. 03, 2009
Applicants:
Koji Akiyama, Nirasaki, JP;
Hirokazu Higashijima, Nirasaki, JP;
Tetsushi Ozaki, Nirasaki, JP;
Tetsuya Shibata, Nirasaki, JP;
Inventors:
Koji Akiyama, Nirasaki, JP;
Hirokazu Higashijima, Nirasaki, JP;
Tetsushi Ozaki, Nirasaki, JP;
Tetsuya Shibata, Nirasaki, JP;
Assignee:
Tokyo Electron Limited, , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
Abstract
The semiconductor device has a stacked structure in which a tunnel oxide layer, a charge trapping layer, a blocking oxide layer, and a gate electrode are sequentially formed on a silicon substrate, wherein the blocking oxide layer includes a crystalline layer disposed adjacent to the charge trapping layer and an amorphous layer disposed adjacent to the gate electrode.