The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2012
Filed:
Sep. 29, 2010
Richard Westhoff, Hudson, NH (US);
Vicky Yang, Windham, NH (US);
Matthew T. Currie, Brookline, MA (US);
Christopher J. Vineis, Cambridge, MA (US);
Christopher Leitz, Manchester, NH (US);
Richard Westhoff, Hudson, NH (US);
Vicky Yang, Windham, NH (US);
Matthew T. Currie, Brookline, MA (US);
Christopher J. Vineis, Cambridge, MA (US);
Christopher Leitz, Manchester, NH (US);
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
Dislocation pile-ups in compositionally graded semiconductor layers are reduced or eliminated, thereby leading to increased semiconductor device yield and manufacturability. This is accomplished by introducing a semiconductor layer having a plurality of threading dislocations distributed substantially uniformly across its surface as a starting layer and/or at least one intermediate layer during growth and relaxation of the compositionally graded layer. The semiconductor layer may include a seed layer disposed proximal to the surface of the semiconductor layer and having the threading dislocations uniformly distributed therein.