The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2012

Filed:

May. 22, 2009
Applicants:

Harry Chuang, Hsin-Chu, TW;

Kong-beng Thei, Hsin-Chu County, TW;

Chiung-han Yeh, Tainan, TW;

Mong-song Liang, Hsin-Chu, TW;

Hou-ju LI, Hsin-Chu, TW;

Ming-yuan Wu, Hsinchu, TW;

Tzung-chi Lee, Banciao, TW;

Inventors:

Harry Chuang, Hsin-Chu, TW;

Kong-Beng Thei, Hsin-Chu County, TW;

Chiung-Han Yeh, Tainan, TW;

Mong-Song Liang, Hsin-Chu, TW;

Hou-Ju Li, Hsin-Chu, TW;

Ming-Yuan Wu, Hsinchu, TW;

Tzung-Chi Lee, Banciao, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 21/70 (2006.01); H01L 21/338 (2006.01); H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device is provided that includes a semiconductor substrate having a first region and a second region, transistors having metal gates formed in the first region, an isolation structure formed in the second region, at least one junction device formed proximate the isolation structure in the second region, and a stopping structure formed overlying the isolation structure in the second region.


Find Patent Forward Citations

Loading…