The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2012
Filed:
Nov. 16, 2009
Douglas D. Coolbaugh, Highland, NY (US);
Ebenezer E. Eshun, Newburgh, NY (US);
Robert M. Rassel, Colchester, VT (US);
Anthony K. Stamper, Williston, VT (US);
Douglas D. Coolbaugh, Highland, NY (US);
Ebenezer E. Eshun, Newburgh, NY (US);
Robert M. Rassel, Colchester, VT (US);
Anthony K. Stamper, Williston, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A capacitor structure includes a semiconductor substrate; a first capacitor plate positioned on the semiconductor substrate, the first capacitor plate including a polysilicon structure having a surrounding spacer; a silicide layer formed in a first portion of an upper surface of the first capacitor plate; a capacitor dielectric layer formed over a second portion of the upper surface of the first capacitor plate and extending laterally beyond the spacer to contact the semiconductor substrate; a contact in an interlayer dielectric (ILD), the contact contacting the silicide layer and a first metal layer over the ILD; and a second capacitor plate over the capacitor dielectric layer, wherein a metal-insulator-metal (MIM) capacitor is formed by the first capacitor plate, the capacitor dielectric layer and the second capacitor plate and a metal-insulator-semiconductor (MIS) capacitor is formed by the second capacitor plate, the capacitor dielectric layer and the semiconductor substrate.