The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2012
Filed:
Aug. 21, 2006
Sean S. Kang, San Ramon, CA (US);
Sang Jun Cho, Pleasanton, CA (US);
Tom Choi, Santa Clara, CA (US);
Taejoon Han, San Ramon, CA (US);
Sean S. Kang, San Ramon, CA (US);
Sang Jun Cho, Pleasanton, CA (US);
Tom Choi, Santa Clara, CA (US);
Taejoon Han, San Ramon, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method of forming dual damascene features in a porous low-k dielectric layer is provided. Vias are formed in the porous low-k dielectric layer. An organic planarization layer is formed over the porous low-k dielectric layer, wherein the organic layer fills the vias. A photoresist mask is formed over the organic planarization layer. Features are etched into the organic planarization layer comprising providing a COcontaining etch gas and forming a plasma from the COcontaining etch gas, which etches the organic planarization layer. Trenches are etched into the porous low-k dielectric layer using the organic planarization layer as a mask. The organic planarization layer is stripped.