The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2012

Filed:

May. 08, 2008
Applicants:

Michael A. Smith, Boise, ID (US);

Xiaolong Fang, Boise, ID (US);

Inventors:

Michael A. Smith, Boise, ID (US);

Xiaolong Fang, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

Among structures, methods, devices, and systems for isolation trenches, a semiconductor device is provided that includes a substrate and an isolation trench structure. One such isolation trench structure includes a first isolation trench portion associated with a surface of the substrate and having a first pair of opposing sidewalls that are each substantially perpendicular to the surface of the substrate. A second isolation trench portion includes a second pair of sidewalls within the substrate that are each angled obliquely with respect to the surface of the substrate, where the second isolation trench portion has a separation between the second pair of sidewalls that decreases as a distance from the first isolation trench portion increases. A third isolation trench portion includes a third pair of sidewalls within the substrate that are each substantially perpendicular to the surface of the substrate.


Find Patent Forward Citations

Loading…