The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2012
Filed:
Dec. 20, 2007
Masaru Hori, Nagoya, JP;
Yoshiro Kabe, Amagasaki, JP;
Toshihiko Shiozawa, Amagasaki, JP;
Junichi Kitagawa, Amagasaki, JP;
Masaru Hori, Nagoya, JP;
Yoshiro Kabe, Amagasaki, JP;
Toshihiko Shiozawa, Amagasaki, JP;
Junichi Kitagawa, Amagasaki, JP;
National University Corporation Nagoya University, Nagoya-shi, JP;
Tokyp Electron Limited, Tokyo, JP;
Abstract
A pattern forming method includes preparing a target object including silicon with an initial pattern formed thereon and having a first line width; performing a plasma oxidation process on the silicon surface inside a process chamber of a plasma processing apparatus and thereby forming a silicon oxide film on a surface of the initial pattern; and removing the silicon oxide film. The pattern forming method is arranged to repeatedly perform formation of the silicon oxide film and removal of the silicon oxide film so as to form an objective pattern having a second line width finer than the first line width on the target object.