The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2012
Filed:
Feb. 16, 2010
Applicants:
Hiroshi Sato, Yamanashi, JP;
Kenji Matsumoto, Yamanashi, JP;
Hitoshi Itoh, Yamanashi, JP;
Inventors:
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided is a manufacturing method of a semiconductor device including a gate insulating film which can be formed into a thin film and of which film composition is easy to be controlled. The manufacturing method includes: forming a manganese oxide film for serving as a gate insulating film on a semiconductor substrate, on which a transistor is formed; forming a conductive film for serving as a gate electrode on the manganese oxide film; and forming a gate electrode and a gate insulating film by processing the conductive film and the manganese oxide film.