The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2012
Filed:
Mar. 03, 2009
Kousa Hirota, Kokubunji, JP;
Yasuhiro Nishimori, Hikari, JP;
Hiroshige Uchida, Kudamatsu, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
The invention provides a method for performing mass production processing of etching a sample capable of maintaining a stable processing profile. The method for performing mass production processing of etching for subjecting a wafer carried into a vacuum processing reactor to plasma processing uses an apparatus comprising a vacuum processing chamber, a gas supply apparatus, a plasma generating means for generating plasma, an emission spectroscope for monitoring the plasma emission, and a device for storing the emission spectrum, wherein a non-operating time of the apparatus (idling SS) occurs in which the mass production processing of the wafer is temporarily stopped, wherein during cleaning steps Sand S' before and after idling SS, emission intensities SiF() and SiF() in the plasma including the information on the state of deposition of reaction products and the temperature on the uppermost surface of the reactor are monitored, and a database Sis referred to based on these emission spectrums, so that the time of the plasma heating step Safter the idling SS is controlled to heat the reactor, and after performing plasma heating S, the next sample is subjected to etching S