The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2012

Filed:

Sep. 13, 2007
Applicants:

Duan-fu Stephen Hsu, Fremont, CA (US);

Jung Chul Park, Pleasanton, CA (US);

Douglas Van Den Broeke, Sunnyvale, CA (US);

Jang Fung Chen, Cupertino, CA (US);

Inventors:

Duan-Fu Stephen Hsu, Fremont, CA (US);

Jung Chul Park, Pleasanton, CA (US);

Douglas Van Den Broeke, Sunnyvale, CA (US);

Jang Fung Chen, Cupertino, CA (US);

Assignee:

ASML Masktools B.V., Veldhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06K 9/00 (2006.01); G06F 17/50 (2006.01); H04N 7/16 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for decomposing a target circuit pattern containing features to be imaged into multiple patterns. The process includes the steps of separating the features to be printed into a first pattern and a second pattern; performing a first optical proximity correction process on the first pattern and the second pattern; determining an imaging performance of the first pattern and the second pattern; determining a first error between the first pattern and the imaging performance of the first pattern, and a second error between the second pattern and the imaging performance of said second pattern; utilizing the first error to adjust the first pattern to generate a modified first pattern; utilizing the second error to adjust the second pattern to generate a modified second pattern; and applying a second optical proximity correction process to the modified first pattern and the modified second pattern.


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