The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2012
Filed:
Mar. 14, 2008
Applicants:
Pramod Subramonium, Salem, OR (US);
Zhiyuan Fang, West Linn, OR (US);
Jon Henri, West Linn, OR (US);
Inventors:
Pramod Subramonium, Salem, OR (US);
Zhiyuan Fang, West Linn, OR (US);
Jon Henri, West Linn, OR (US);
Assignee:
Novellus Systems, Inc., San Jose, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming a PECVD deposited amorphous carbon or ashable hard mask (AHM) in a trench or a via with less than 30% H content at a process temperature below 500° C., e.g., about 400° C. produces low H content hard masks with high selectivity and little or no hard mask on the sidewalls. The deposition method utilizes a pulsed precursor delivery with a plasma etch while the precursor flow is off.