The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2012
Filed:
Aug. 15, 2007
Matt Yeh, Hsinchun, TW;
Da-yuan Lee, Kaohsiung, TW;
Chi-chun Chen, Kaohsiung, TW;
Hun-jan Tao, Hsin Chu, TW;
Matt Yeh, Hsinchun, TW;
Da-Yuan Lee, Kaohsiung, TW;
Chi-Chun Chen, Kaohsiung, TW;
Hun-Jan Tao, Hsin Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of manufacturing a semiconductor device comprising forming a gate oxide layer over a substrate subjecting the gate oxide layer to a first nitridation process, subjecting the gate oxide layer to a first anneal process after the first nitridation process, subjecting the gate oxide layer to a second nitridation process after the first anneal process, subjecting the gate oxide layer to a second anneal process after the second nitridation process, and forming a gate electrode over the gate oxide.