The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2012
Filed:
Jun. 15, 2009
Takanobu Takeda, Jyoetsu, JP;
Satoshi Watanabe, Jyoetsu, JP;
Tamotsu Watanabe, Jyoetsu, JP;
Akinobu Tanaka, Jyoetsu, JP;
Keiichi Masunaga, Jyoetsu, JP;
Ryuji Koitabashi, Jyoetsu, JP;
Takanobu Takeda, Jyoetsu, JP;
Satoshi Watanabe, Jyoetsu, JP;
Tamotsu Watanabe, Jyoetsu, JP;
Akinobu Tanaka, Jyoetsu, JP;
Keiichi Masunaga, Jyoetsu, JP;
Ryuji Koitabashi, Jyoetsu, JP;
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Abstract
There is disclosed a resist patterning process with a minimum line width of 65 nanometers or less may be formed by using a resist composition containing a polymer, as a base polymer of a chemically-amplified resist composition, composed of a styrene unit whose hydroxyl group is protected by an acid labile group, and an indene unit, and/or an acenaphthalene unit, wherein the polymer has the weight-average molecular weight of 4,000 to 7,000, and in particular, 4,500 to 5,500. One of the currently existing problems to be solved is the line edge roughness. To solve this problem by an acid-generator and a basic compound, there is a problem of the trade-off relationship with a resolution power. There can be provided a resist composition having a high resolution containing a base polymer such as hydroxystyrene that is protected by an acid labile group, a resist patterning process with a pattern rule of 65 nanometers or less having a reduced line edge roughness.