The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2012

Filed:

Oct. 12, 2009
Applicants:

Kwangduk Douglas Lee, Redwood City, CA (US);

Takashi Morii, Wakayama, JP;

Yoichi Suzuki, Chiba-Ken, JP;

Sudha Rathi, San Jose, CA (US);

Martin Jay Seamons, San Jose, CA (US);

Deenesh Padhi, Sunnyvale, CA (US);

Bok Hoen Kim, San Jose, CA (US);

Cynthia Pagdanganan, San Jose, CA (US);

Inventors:

Kwangduk Douglas Lee, Redwood City, CA (US);

Takashi Morii, Wakayama, JP;

Yoichi Suzuki, Chiba-Ken, JP;

Sudha Rathi, San Jose, CA (US);

Martin Jay Seamons, San Jose, CA (US);

Deenesh Padhi, Sunnyvale, CA (US);

Bok Hoen Kim, San Jose, CA (US);

Cynthia Pagdanganan, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C01B 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods and apparatus for depositing an amorphous carbon layer on a substrate are provided. In one embodiment, a deposition process includes positioning a substrate in a substrate processing chamber, introducing a hydrocarbon source having a carbon to hydrogen atom ratio of greater than 1:2 into the processing chamber, introducing a plasma initiating gas selected from the group consisting of hydrogen, helium, argon, nitrogen, and combinations thereof into the processing chamber, with the hydrocarbon source having a volumetric flow rate to plasma initiating gas volumetric flow rate ratio of 1:2 or greater, generating a plasma in the processing chamber, and forming a conformal amorphous carbon layer on the substrate.


Find Patent Forward Citations

Lee, Kwangduk. (2012). Method for depositing conformal amorphous carbon film by plasma-enhanced chemical vapor deposition (pecvd) (U.S. Patent No. 8105465). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8105465

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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