The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2012
Filed:
Jan. 28, 2011
Keiji Ishibashi, Itami, JP;
Akihiro Hachigo, Itami, JP;
Masato Irikura, Itami, JP;
Seiji Nakahata, Itami, JP;
Keiji Ishibashi, Itami, JP;
Akihiro Hachigo, Itami, JP;
Masato Irikura, Itami, JP;
Seiji Nakahata, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate is one of the following: a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface is not more than 2×10, and the number of silicon atoms per square centimeter of the surface is not more than 3×10; a group III nitride substrate, wherein the number of silicon atoms per square centimeter of a surface is not more than 3×10, and a haze level of the surface is not more than 5 ppm; and a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface is not more than 2×10, and a haze level of the surface is not more than 5 ppm.