Hyogo, Japan

Masato Irikura

USPTO Granted Patents = 13 

 

Average Co-Inventor Count = 2.7

ph-index = 5

Forward Citations = 32(Granted Patents)


Location History:

  • Itami, JP (2010 - 2012)
  • Hyogo, JP (2006 - 2014)

Company Filing History:


Years Active: 2006-2014

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13 patents (USPTO):Explore Patents

Title: Masato Irikura: Innovator in Semiconductor Technology

Introduction

Masato Irikura is a prominent inventor based in Hyogo, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of gallium nitride (GaN) wafers. With a total of 13 patents to his name, Irikura's work has advanced the manufacturing processes of these essential materials.

Latest Patents

One of Irikura's latest patents is focused on the chamfering of freestanding nitride semiconductor wafers. The technology for producing freestanding GaN wafers has matured over time, yet challenges remain due to the rigidity and fragility of gallium nitride. Traditional methods of chamfering the edges of GaN wafers have resulted in roughness levels that can lead to defects during the wafer processing stages. Irikura's innovative approach involves fixing the wafer to a chuck of a rotor and using an elastic whetting material with a soft matrix. This method allows for multiple chamfering processes with finer granules, achieving a remarkable edge roughness of Ra 10 nm and Ra 5 μm.

Career Highlights

Masato Irikura is currently employed at Sumitomo Electric Industries, Limited, where he continues to push the boundaries of semiconductor technology. His work has not only improved the quality of GaN wafers but has also contributed to the overall efficiency of semiconductor manufacturing processes.

Collaborations

Throughout his career, Irikura has collaborated with notable colleagues, including Masahiro Nakayama and Keiji Ishibashi. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Masato Irikura's contributions to semiconductor technology, particularly in the area of gallium nitride wafers, highlight his role as a leading inventor in the field. His innovative methods for chamfering wafers have the potential to significantly enhance the manufacturing process and improve product quality.

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