The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2012
Filed:
Oct. 29, 2008
Karsten Wieczorek, Dresden, DE;
Manfred Horstmann, Duerrroehrsdorf-Dittersbach, DE;
Peter Huebler, Coswig, DE;
Kerstin Ruttloff, Hainichen, DE;
Karsten Wieczorek, Dresden, DE;
Manfred Horstmann, Duerrroehrsdorf-Dittersbach, DE;
Peter Huebler, Coswig, DE;
Kerstin Ruttloff, Hainichen, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
In a dual stress liner approach, an intermediate etch stop material may be provided on the basis of a plasma-assisted oxidation process rather than by deposition so the corresponding thickness of the etch stop material may be reduced. Consequently, the resulting aspect ratio may be less pronounced compared to conventional strategies, thereby reducing deposition-related irregularities which may translate into a significant reduction of yield loss, in particular for highly scaled semiconductor devices.