The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2012
Filed:
Mar. 13, 2009
Reza A. Pagaila, Singapore, SG;
Byung Tai DO, Singapore, SG;
Shuangwu Huang, Singapore, SG;
Nathapong Suthiwongsunthorn, Singapore, SG;
Dioscoro Merilo, Singapore, SG;
Reza A. Pagaila, Singapore, SG;
Byung Tai Do, Singapore, SG;
Shuangwu Huang, Singapore, SG;
Nathapong Suthiwongsunthorn, Singapore, SG;
Dioscoro Merilo, Singapore, SG;
STATS ChipPAC, Ltd., Singapore, SG;
Abstract
A semiconductor wafer has a plurality of semiconductor die. A peripheral region is formed around the die. An insulating material is formed in the peripheral region. A portion of the insulating material is removed to form a through hole via (THV). A conductive material is deposited in the THV to form a conductive THV. A conductive layer is formed between the conductive THV and contact pads of the semiconductor die. A noise absorbing material is deposited in the peripheral region between the conductive THV to isolate the semiconductor die from intra-device interference. The noise absorbing material extends through the peripheral region from a first side of the semiconductor die to a second side of the semiconductor die. The noise absorbing material has an angular, semi-circular, or rectangular shape. The noise absorbing material can be dispersed in the peripheral region between the conductive THV.