The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2012
Filed:
Oct. 31, 2008
Philip S. H. Chen, Bethel, CT (US);
William Hunks, Waterbury, CT (US);
Tianniu Chen, Rocky Hill, CT (US);
Matthias Stender, New Milford, CT (US);
Chongying Xu, New Milford, CT (US);
Jeffrey F. Roeder, Brookfield, CT (US);
Weimin LI, New Milford, CT (US);
Philip S. H. Chen, Bethel, CT (US);
William Hunks, Waterbury, CT (US);
Tianniu Chen, Rocky Hill, CT (US);
Matthias Stender, New Milford, CT (US);
Chongying Xu, New Milford, CT (US);
Jeffrey F. Roeder, Brookfield, CT (US);
Weimin Li, New Milford, CT (US);
Advanced Technology Materials, Inc., Danbury, CT (US);
Abstract
Germanium, tellurium, and/or antimony precursors are usefully employed to form germanium-, tellurium- and/or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous films are also described. Further described is the use of [{nBuC(iPrN)}Ge] or Ge butyl amidinate to form GeTe smooth amorphous films for phase change memory applications.