The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2012
Filed:
Feb. 26, 2009
Mark Kiehlbauch, Boise, ID (US);
Ted Lyle Taylor, Boise, ID (US);
Mark Kiehlbauch, Boise, ID (US);
Ted Lyle Taylor, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
An interlevel dielectric layer, such as a silicon oxide layer, is selectively etched using a plasma etch chemistry including a silicon species and a halide species and also preferably a carbon species and an oxygen species. The silicon species can be generated from a silicon compound, such as SiMH, where 'Si' is silicon, 'M' is one or more halogens, “H” is hydrogen and x≧1, y≧0 and z≧0. The carbon species can be generated from a carbon compound, such as CMH, where “C” is carbon, “M” is one or more halogens, “H” is hydrogen, and α≧1, β≧0 and γ≧0. The oxygen species can be generated from an oxygen compound, such as O, which can react with carbon to form a volatile compound.