The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2012
Filed:
Nov. 21, 2006
Sang H. Ahn, Foster City, CA (US);
Sudha Rathi, San Jose, CA (US);
Heraldo L. Bothelho, Palo Alto, CA (US);
Sang H. Ahn, Foster City, CA (US);
Sudha Rathi, San Jose, CA (US);
Heraldo L. Bothelho, Palo Alto, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
We have traced the detachment of photoresist during development of patterned features in the range of about 90 nm and smaller to a combination of the reduced 'foot print' of the pattern on the underlying substrate and to the contact angle between the underlying substrate surface and the developing reagent. By maintaining a contact angle of about 30 degrees or greater, the detachment of the photoresist from the underlying substrate can be avoided for photoresists including feature sizes in the range of about 90 nm. We have achieved an increased contact angle between the DARC surface and a water-based CAR photoresist developer while simultaneously reducing CAR poisoning by treating the surface of the DARC after film formation.