The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2011
Filed:
Jun. 29, 2005
Satoru Shimura, Nirasaki, JP;
Kazuhiro Kubota, Nirasaki, JP;
Ryuichi Asako, Nirasaki, JP;
Seiichi Takayama, Nirasaki, JP;
Satoru Shimura, Nirasaki, JP;
Kazuhiro Kubota, Nirasaki, JP;
Ryuichi Asako, Nirasaki, JP;
Seiichi Takayama, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
In a semiconductor device manufacturing method, an etching mask () having a predetermined opening pattern is formed on an etching target film () disposed on a target object. Then, an etching process is performed on the etching target film () through the opening pattern of the etching mask () within a first process chamber, thereby forming a groove or hole () in the etching target film. Then, the target object treated by the etching process is transferred from the first process chamber to a second process chamber, within a vacuum atmosphere. Then, a silylation process is performed on a side surface of the groove or hole (), which is an exposed portion of the etching target film (), within the second process chamber.