The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2011
Filed:
Feb. 13, 2009
Ling Chen, Sunnyvale, CA (US);
Vincent W. Ku, Palo Alto, CA (US);
Hua Chung, San Jose, CA (US);
Christophe Marcadal, Sunnyvale, CA (US);
Seshadri Ganguli, Sunnyvale, CA (US);
Jenny Lin, Saratoga, CA (US);
Dien-yeh Wu, San Jose, CA (US);
Alan Ouye, San Mateo, CA (US);
Mei Chang, Saratoga, CA (US);
Ling Chen, Sunnyvale, CA (US);
Vincent W. Ku, Palo Alto, CA (US);
Hua Chung, San Jose, CA (US);
Christophe Marcadal, Sunnyvale, CA (US);
Seshadri Ganguli, Sunnyvale, CA (US);
Jenny Lin, Saratoga, CA (US);
Dien-Yeh Wu, San Jose, CA (US);
Alan Ouye, San Mateo, CA (US);
Mei Chang, Saratoga, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments described herein are directed to an apparatus for generating a precursor for a semiconductor processing system. In one embodiment, an apparatus for generating a precursor gas during a vapor deposition process is described. The apparatus includes a canister containing an interior volume between a lid and a bottom, a gaseous inlet and a gaseous outlet disposed on the lid, a plurality of silos coupled to the bottom and extending from a lower region to an upper region of the interior volume, and a tantalum precursor having a chlorine concentration of about 5 ppm or less contained within the lower region of the canister.