The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2011
Filed:
Dec. 23, 2008
Nerissa Draeger, Fremont, CA (US);
Harald Te Nijenhuis, San Jose, CA (US);
Henner Meinhold, Fremont, CA (US);
Bart Van Schravendijk, Sunnyvale, CA (US);
Lakshmi Nittala, Sunnyvale, CA (US);
Nerissa Draeger, Fremont, CA (US);
Harald te Nijenhuis, San Jose, CA (US);
Henner Meinhold, Fremont, CA (US);
Bart van Schravendijk, Sunnyvale, CA (US);
Lakshmi Nittala, Sunnyvale, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
Higher overall etch rate and throughput for atomic layer removal (ALR) is achieved. The reaction is a self-limiting process, thus limiting the total amount of material that may be etched per cycle. By pumping down the process station between reacting operations, the reaction is partially 'reset.' A higher overall etch rate is achieved by a multiple exposure with pump down ALR process.