The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2011

Filed:

Jan. 28, 2010
Applicants:

Sia Kim Tan, Singapore, SG;

Soon Yoeng Tan, Skudai, MY;

Qun Ying Lin, Singapore, SG;

Huey Ming Chong, Singapore, SG;

Liang Choo Hsia, Singapore, SG;

Inventors:

Sia Kim Tan, Singapore, SG;

Soon Yoeng Tan, Skudai, MY;

Qun Ying Lin, Singapore, SG;

Huey Ming Chong, Singapore, SG;

Liang Choo Hsia, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of making a mask is disclosed. The method includes providing a first and a second mask layers and disposing a first phase shift region on the first mask layer. A second phase shift region is disposed on the second mask layer, wherein the first and second phase shift regions are out of phase. A continuous unit cell is formed in the first phase shift region. The unit cell comprises a center section and distinct extension sections. The extension sections are contiguous to and extend outwards from the center section. The distinct extension sections have a same width as the center section. The second phase shift region is adjacent to the unit cell in the first phase shift region.


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