The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 08, 2011

Filed:

Feb. 28, 2008
Applicants:

Yuki Kataoka, Sapporo, JP;

Tatsuya Yamaguchi, Nirasaki, JP;

Wenling Wang, Nirasaki, JP;

Yuichi Takenaga, Nirasaki, JP;

Inventors:

Yuki Kataoka, Sapporo, JP;

Tatsuya Yamaguchi, Nirasaki, JP;

Wenling Wang, Nirasaki, JP;

Yuichi Takenaga, Nirasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 19/00 (2011.01); G05B 13/02 (2006.01); G05D 7/00 (2006.01); C23C 16/52 (2006.01); B05C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides a processing system, a processing method and a program, which can readily control a gas flow rate. A vertical-type heating apparatusincludes a plurality of gas supply pipestoeach adapted for supplying a processing gas into a reaction vesselconfigured to contain therein semiconductor wafers W. For the gas supply pipesto, flow rate control unitstoare provided, respectively, for controlling each flow rate. In a control unit, processing conditions including the flow rate of the processing gas and a film thickness-flow rate-relationship model indicative of a relationship between the flow rate of the processing gas and a film thickness, are stored. The control unitcalculates the flow rate of the processing gas based on a process result obtained by processing the semiconductor wafers W under the processing conditions as well as on the film thickness-flow rate-relationship model, so as to process the semiconductor wafers W, while controlling the respective flow rate control unitsto, such that the flow rate of the processing gas will be changed into the calculated flow rate of the processing gas.


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