The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2011
Filed:
May. 02, 2008
Martin C. Peckerar, Silver Spring, MD (US);
Mario Dagenais, Chevy Chase, MD (US);
Birendra Dutt, Westchester, CA (US);
John D. Barry, College Park, MD (US);
Michael D. Messina, Jr., Southport, CT (US);
Yves Ngu, Greenbelt, MD (US);
Martin C. Peckerar, Silver Spring, MD (US);
Mario Dagenais, Chevy Chase, MD (US);
Birendra Dutt, Westchester, CA (US);
John D. Barry, College Park, MD (US);
Michael D. Messina, Jr., Southport, CT (US);
Yves Ngu, Greenbelt, MD (US);
University of Maryland, College Park, MD (US);
Abstract
A stepper system for ultra-high resolution nano-lithography employs a photolithographic mask which includes a layer of an electrically conductive optically opaque material in which periodic arrays of sub-wavelength apertures are formed. The plasmonic excitation in the photolithographic mask exposed to the light of the wavelength in the range of 197 nm-248 nm, produces high resolution far-field radiation patterns of sufficient intensity to expose a photoresist on a wafer. The stepper system demonstrates the resiliency to the mask defects and ability to imprint coherent clear features of nano dimensions (45 nm-500 nm) and various shapes on the wafers for integrated circuits design. The stepper system may be adjusted to image the plane of the highest plasmonic field exiting the mask.