The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2011
Filed:
May. 02, 2008
Martin C. Peckerar, Silver Spring, MD (US);
Mario Dagenais, Chevy Chase, MD (US);
Birendra Dutt, Westchester, CA (US);
John D. Barry, College Park, MD (US);
Michael D. Messina, Jr., Southport, CT (US);
Yves Ngu, Greenbelt, MD (US);
Martin C. Peckerar, Silver Spring, MD (US);
Mario Dagenais, Chevy Chase, MD (US);
Birendra Dutt, Westchester, CA (US);
John D. Barry, College Park, MD (US);
Michael D. Messina, Jr., Southport, CT (US);
Yves Ngu, Greenbelt, MD (US);
University of Maryland, College Park, MD (US);
Abstract
A nanophotolithography mask includes a layer of an electrically conductive optically opaque material deposited on a mask substrate in which regular arrays of sub-wavelength apertures are formed. The plasmonic excitation in the layer perforated with the sub-wavelength apertures arrays under the light incident on the mask produces high resolution far-field radiation patterns of sufficient intensity to expose a photoresist on a wafer when propagated to the same. The fill-factor of the mask, i.e., the ratio of the total apertures area to the total mask area, may lead to a significant increase in mask manufacturing throughput by FIB or electron beam 'writing'. The mask demonstrates the defect resiliency and ability to imprint coherent clear features of nano dimensions and shapes on the wafers for integrated circuits design.