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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8052885 B1

PDFFull Text
Expired
Date of Patent:
Nov. 08, 2011

Filed:

Jan. 12, 2007

Structural modification using electron beam activated chemical etch

Applicants:

Mehran Naser-ghodsi, Hamilton, MA (US);

Garrett Pickard, Mountain View, CA (US);

Rudy F. Garcia, Union City, CA (US);

Ming Lun Yu, Fremont, CA (US);

Kenneth Krzeczowski, Scotts Valley, CA (US);

Matthew Lent, Livermore, CA (US);

Sergey Lopatin, Morgan Hill, CA (US);

Chris Huang, Cupertino, CA (US);

Niles K. Macdonald, San Jose, CA (US);

Inventors:

Mehran Naser-Ghodsi, Hamilton, MA (US);

Garrett Pickard, Mountain View, CA (US);

Rudy F. Garcia, Union City, CA (US);

Ming Lun Yu, Fremont, CA (US);

Kenneth Krzeczowski, Scotts Valley, CA (US);

Matthew Lent, Livermore, CA (US);

Sergey Lopatin, Morgan Hill, CA (US);

Chris Huang, Cupertino, CA (US);

Niles K. MacDonald, San Jose, CA (US);

Assignee:

KLA-Tencor Corporation, San Jose, CA (US);

Attorneys:

Joshua D. Isenberg

JDI Patent

Primary Examiner:

Nadine G Norton

Assistant Examiner:

Stephanie Duclair

Int. Cl.
CPC ...
B44C 1/22 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01); H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract

Structural modification using electron beam activated chemical etch (EBACE) is disclosed. A target or portion thereof may be exposed to a gas composition of a type that etches the target when the gas composition and/or target are exposed to an electron beam. By directing an electron beam toward the target in the vicinity of the gas composition, an interaction between the electron beam and the gas composition etches a portion of the target exposed to both the gas composition and the electron beam. Structural modifications of the target may be conducted by means of etching due to interaction between the electron beam and gas composition.

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Naser-Ghodsi, Mehran. (2011). Structural modification using electron beam activated chemical etch (U.S. Patent No. 8052885). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8052885

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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