The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2011
Filed:
Oct. 28, 2010
Applicants:
Jens Heinrich, Wachau, DE;
Kai Frohberg, Niederau, DE;
Sven Mueller, Wiednitz, DE;
Kerstin Ruttloff, Hainichen, DE;
Inventors:
Jens Heinrich, Wachau, DE;
Kai Frohberg, Niederau, DE;
Sven Mueller, Wiednitz, DE;
Kerstin Ruttloff, Hainichen, DE;
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/84 (2006.01); H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract
In sophisticated SOI devices, circuit elements, such as substrate diodes, may be formed in the crystalline substrate material on the basis of a substrate window, wherein the pronounced surface topography may be compensated for or at least reduced by performing additional planarization processes, such as the deposition of a planarization material, and a subsequent etch process when forming the contact level of the semiconductor device.