The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2011

Filed:

Jun. 01, 2010
Applicants:

Wataru Shimizu, Yamanashi, JP;

Kazuhiro Kubota, Yamanashi, JP;

Daisuke Hayashi, Yamanashi, JP;

Inventors:

Wataru Shimizu, Yamanashi, JP;

Kazuhiro Kubota, Yamanashi, JP;

Daisuke Hayashi, Yamanashi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

There is provided a processing method for performing a recovery process on a damaged layer formed on a surface of a low-k film of a target substrate by introducing a processing gas containing a methyl group into a processing chamber. The method includes: increasing an internal pressure of the processing chamber up to a first pressure lower than a processing pressure for the recovery process by introducing a dilution gas into the processing chamber maintained in a depressurized state; then stopping the introduction of the dilution gas, and increasing the internal pressure of the processing chamber up to a second pressure as the processing pressure for the recovery process by introducing the processing gas into a region where the target substrate exists within the processing chamber; and performing the recovery process on the target substrate while the processing pressure is maintained.


Find Patent Forward Citations

Loading…