The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2011
Filed:
Nov. 18, 2009
Chien-teh Kao, Sunnyvale, CA (US);
Xinliang LU, Fremont, CA (US);
Zhenbin GE, San Jose, CA (US);
Mei Chang, Saratoga, CA (US);
Hoiman Raymond Hung, Cupertino, CA (US);
Nitin Ingle, Santa Clara, CA (US);
Chien-Teh Kao, Sunnyvale, CA (US);
Xinliang Lu, Fremont, CA (US);
Zhenbin Ge, San Jose, CA (US);
Mei Chang, Saratoga, CA (US);
Hoiman Raymond Hung, Cupertino, CA (US);
Nitin Ingle, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. Particularly, embodiments of the present invention relates to apparatus and methods for forming shallow trench isolations having recesses with rounded bottoms. One embodiment of the present invention comprises forming a recess in a filled trench structure by removing a portion of a material from the filled trench structure and rounding bottom corners of the recess. Rounding bottom corners is performed by depositing a conformal layer of the same material filled in the trench structure over the substrate and removing the conformal layer of the material from sidewalls of the recess.