The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2011
Filed:
Aug. 21, 2003
Tsuyoshi Nakamura, Kanagawa-ken, JP;
Tasuku Matsumiya, Kanagawa-ken, JP;
Kiyoshi Ishikawa, Kanagawa-ken, JP;
Yoshiki Sugeta, Kanagawa-ken, JP;
Toshikazu Tachikawa, Kanagawa-ken, JP;
Tsuyoshi Nakamura, Kanagawa-ken, JP;
Tasuku Matsumiya, Kanagawa-ken, JP;
Kiyoshi Ishikawa, Kanagawa-ken, JP;
Yoshiki Sugeta, Kanagawa-ken, JP;
Toshikazu Tachikawa, Kanagawa-ken, JP;
Tokyo Ohka Kogyo Co., Ltd., Kanagawa-ken, JP;
Abstract
It is disclosed a method of forming fine patterns comprising: covering a substrate having photoresist patterns thereon made of a photoresist composition which is sensitive to high energy light rays with wavelength of 200 nm or shorter or electron beam radiation, with an over-coating agent for forming fine patterns, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between adjacent photoresist patterns is lessened by the resulting thermal shrinking action, and removing the over-coating agent substantially completely. The present invention provides a method of forming fine patterns whereby fine patterns having pattern width or diameter of 100 nm or shorter and being excellent in uniformity (in-plane uniformity), etc. can be formed by ultrafine processing using high energy light rays with wavelength of 200 nm or shorter or electron beams.