The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2011

Filed:

Aug. 04, 2008
Applicants:

Danielle L. Degraw, Hyde Park, NY (US);

Peter James Lindgren, Essex Junction, VT (US);

Da-yuan Shih, Poughkeepsie, NY (US);

Ping-chuan Wang, Hopewell Junction, NY (US);

Inventors:

Danielle L. DeGraw, Hyde Park, NY (US);

Peter James Lindgren, Essex Junction, VT (US);

Da-Yuan Shih, Poughkeepsie, NY (US);

Ping-Chuan Wang, Hopewell Junction, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Back side metal (BSM) delamination induced by chip dicing of silicon wafers is avoided by roughening the polished silicon surface at chip edges by etching. The Thru-Silicon-Via (TSV) structures used in 3D chip integration is masked at the back side from roughening to maintain the polished surface at the TSV structures and, thus, reliable conductivity to the BSM layer.


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